Title: <title>Cluster tool for photomask inspection and qualification at 150-nm design rules and beyond</title>
Abstract: The reduction of the wave length in the optical lithography in combination with mask enhancement techniques like phase shift pattern, optical proximity correction (OPC) or off- axis illumination requires a rapid increase in measurement accuracy and cost effective qualification of advanced photo masks. The knowledge about the impact of CD deviations, loss of pattern fidelity--especially of OPC structures--and mask defects on wafer level in more and more essential for mask qualification.
Publication Year: 2000
Publication Date: 2000-02-03
Language: en
Type: article
Indexed In: ['crossref']
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