Title: Comparing photomask and wafer post-develop defect formation
Abstract: The reduction of post-develop defects in photomask making is significantly more critical than in wafer processing. While wafers can afford to experience some level of defect density, photomasks are required to be defect free. Defect density learning in photomask making is expensive and time-consuming given the material and exposure time costs. In a wafer fab, it is much easier to run factorial experiments to get large amounts of data in a short amount of time. Some photomask making and wafer processing defect generation mechanisms are the same. Here a study of the formation of resist material residues during develop will be compared between photomask and wafer processing. Wafer processing experience will provide insight into photomask post-develop defect formation. Several options for the elimination of this defect type will be discussed. Differences in implementation strategies between photomask makers and wafer lithographers will also be discussed.
Publication Year: 2002
Publication Date: 2002-07-31
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 1
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot