Publication Information

{'id': 'https://openalex.org/W2058040533', 'doi': 'https://doi.org/10.1109/iedm.2014.7047032', 'title': 'Schottky-on-heterojunction optoelectronic functional devices realized on AlGaN/GaN-on-Si platform', 'display_name': 'Schottky-on-heterojunction optoelectronic functional devices realized on AlGaN/GaN-on-Si platform', 'publication_year': 2014, 'publication_date': '2014-12-01', 'ids': {'openalex': 'https://openalex.org/W2058040533', 'doi': 'https://doi.org/10.1109/iedm.2014.7047032', 'mag': '2058040533'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/iedm.2014.7047032', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'proceedings-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5014231975', 'display_name': 'Baikui Li', 'orcid': 'https://orcid.org/0000-0002-3118-5488'}, 'institutions': [{'id': 'https://openalex.org/I889458895', 'display_name': 'University of Hong Kong', 'ror': 'https://ror.org/02zhqgq86', 'country_code': 'HK', 'type': 'education', 'lineage': ['https://openalex.org/I889458895']}, {'id': 'https://openalex.org/I200769079', 'display_name': 'Hong Kong University of Science and Technology', 'ror': 'https://ror.org/00q4vv597', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I200769079']}], 'countries': ['CN', 'HK'], 'is_corresponding': False, 'raw_author_name': 'None Baikui Li', 'raw_affiliation_strings': ['Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Hong Kong'], 'affiliations': [{'raw_affiliation_string': 'Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Hong Kong', 'institution_ids': ['https://openalex.org/I889458895', 'https://openalex.org/I200769079']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5020778867', 'display_name': 'Xi Tang', 'orcid': 'https://orcid.org/0000-0002-4479-4485'}, 'institutions': [{'id': 'https://openalex.org/I889458895', 'display_name': 'University of Hong Kong', 'ror': 'https://ror.org/02zhqgq86', 'country_code': 'HK', 'type': 'education', 'lineage': ['https://openalex.org/I889458895']}, {'id': 'https://openalex.org/I200769079', 'display_name': 'Hong Kong University of Science and Technology', 'ror': 'https://ror.org/00q4vv597', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I200769079']}], 'countries': ['CN', 'HK'], 'is_corresponding': False, 'raw_author_name': 'None Xi Tang', 'raw_affiliation_strings': ['Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Hong Kong'], 'affiliations': [{'raw_affiliation_string': 'Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Hong Kong', 'institution_ids': ['https://openalex.org/I889458895', 'https://openalex.org/I200769079']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5047869940', 'display_name': 'Qimeng Jiang', 'orcid': 'https://orcid.org/0000-0002-7554-1763'}, 'institutions': [{'id': 'https://openalex.org/I889458895', 'display_name': 'University of Hong Kong', 'ror': 'https://ror.org/02zhqgq86', 'country_code': 'HK', 'type': 'education', 'lineage': ['https://openalex.org/I889458895']}, {'id': 'https://openalex.org/I200769079', 'display_name': 'Hong Kong University of Science and Technology', 'ror': 'https://ror.org/00q4vv597', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I200769079']}], 'countries': ['CN', 'HK'], 'is_corresponding': False, 'raw_author_name': 'Qimeng Jiang', 'raw_affiliation_strings': ['Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Hong Kong'], 'affiliations': [{'raw_affiliation_string': 'Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Hong Kong', 'institution_ids': ['https://openalex.org/I889458895', 'https://openalex.org/I200769079']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5033705444', 'display_name': 'Yunyou Lu', 'orcid': 'https://orcid.org/0000-0003-0951-8634'}, 'institutions': [{'id': 'https://openalex.org/I889458895', 'display_name': 'University of Hong Kong', 'ror': 'https://ror.org/02zhqgq86', 'country_code': 'HK', 'type': 'education', 'lineage': ['https://openalex.org/I889458895']}, {'id': 'https://openalex.org/I200769079', 'display_name': 'Hong Kong University of Science and Technology', 'ror': 'https://ror.org/00q4vv597', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I200769079']}], 'countries': ['CN', 'HK'], 'is_corresponding': False, 'raw_author_name': 'None Yunyou Lu', 'raw_affiliation_strings': ['Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Hong Kong'], 'affiliations': [{'raw_affiliation_string': 'Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Hong Kong', 'institution_ids': ['https://openalex.org/I889458895', 'https://openalex.org/I200769079']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5015340998', 'display_name': 'Hanxing Wang', 'orcid': 'https://orcid.org/0000-0003-0194-3214'}, 'institutions': [{'id': 'https://openalex.org/I889458895', 'display_name': 'University of Hong Kong', 'ror': 'https://ror.org/02zhqgq86', 'country_code': 'HK', 'type': 'education', 'lineage': ['https://openalex.org/I889458895']}, {'id': 'https://openalex.org/I200769079', 'display_name': 'Hong Kong University of Science and Technology', 'ror': 'https://ror.org/00q4vv597', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I200769079']}], 'countries': ['CN', 'HK'], 'is_corresponding': False, 'raw_author_name': 'Hanxing Wang', 'raw_affiliation_strings': ['Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Hong Kong'], 'affiliations': [{'raw_affiliation_string': 'Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Hong Kong', 'institution_ids': ['https://openalex.org/I889458895', 'https://openalex.org/I200769079']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5106762839', 'display_name': 'Jiannong Wang', 'orcid': 'https://orcid.org/0000-0002-6133-6371'}, 'institutions': [{'id': 'https://openalex.org/I200769079', 'display_name': 'Hong Kong University of Science and Technology', 'ror': 'https://ror.org/00q4vv597', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I200769079']}, {'id': 'https://openalex.org/I889458895', 'display_name': 'University of Hong Kong', 'ror': 'https://ror.org/02zhqgq86', 'country_code': 'HK', 'type': 'education', 'lineage': ['https://openalex.org/I889458895']}], 'countries': ['CN', 'HK'], 'is_corresponding': False, 'raw_author_name': 'Jiannong Wang', 'raw_affiliation_strings': ['Department of Physics, The Hong Kong University of Science and Technology, Hong Kong.'], 'affiliations': [{'raw_affiliation_string': 'Department of Physics, The Hong Kong University of Science and Technology, Hong Kong.', 'institution_ids': ['https://openalex.org/I200769079', 'https://openalex.org/I889458895']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5085053354', 'display_name': 'Kevin J. Chen', 'orcid': 'https://orcid.org/0000-0002-0659-2022'}, 'institutions': [{'id': 'https://openalex.org/I889458895', 'display_name': 'University of Hong Kong', 'ror': 'https://ror.org/02zhqgq86', 'country_code': 'HK', 'type': 'education', 'lineage': ['https://openalex.org/I889458895']}, {'id': 'https://openalex.org/I200769079', 'display_name': 'Hong Kong University of Science and Technology', 'ror': 'https://ror.org/00q4vv597', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I200769079']}], 'countries': ['CN', 'HK'], 'is_corresponding': False, 'raw_author_name': 'Kevin J. Chen', 'raw_affiliation_strings': ['Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Hong Kong'], 'affiliations': [{'raw_affiliation_string': 'Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Hong Kong', 'institution_ids': ['https://openalex.org/I889458895', 'https://openalex.org/I200769079']}]}], 'institution_assertions': [], 'countries_distinct_count': 2, 'institutions_distinct_count': 2, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 5.23, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 10, 'citation_normalized_percentile': {'value': 0.764493, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 86, 'max': 87}, 'biblio': {'volume': None, 'issue': None, 'first_page': None, 'last_page': None}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10099', 'display_name': 'First-Principles Calculations for III-Nitride Semiconductors', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10099', 'display_name': 'First-Principles Calculations for III-Nitride Semiconductors', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T12529', 'display_name': 'Gallium Oxide (Ga2O3) Semiconductor Materials and Devices', 'score': 0.9983, 'subfield': {'id': 'https://openalex.org/subfields/2504', 'display_name': 'Electronic, Optical and Magnetic Materials'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10472', 'display_name': 'Atomic Layer Deposition Technology', 'score': 0.9948, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/ohmic-contact', 'display_name': 'Ohmic contact', 'score': 0.6680807}, {'id': 'https://openalex.org/keywords/algan/gan-hemts', 'display_name': 'AlGaN/GaN HEMTs', 'score': 0.5448}, {'id': 'https://openalex.org/keywords/wide-bandgap-semiconductor', 'display_name': 'Wide-bandgap semiconductor', 'score': 0.54329634}, {'id': 'https://openalex.org/keywords/light-emitting-diodes', 'display_name': 'Light-Emitting Diodes', 'score': 0.521523}, {'id': 'https://openalex.org/keywords/uv-leds', 'display_name': 'UV LEDs', 'score': 0.502321}], 'concepts': [{'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.8846241}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.8541265}, {'id': 'https://openalex.org/C205200001', 'wikidata': 'https://www.wikidata.org/wiki/Q176066', 'display_name': 'Schottky diode', 'level': 3, 'score': 0.69315135}, {'id': 'https://openalex.org/C138230450', 'wikidata': 'https://www.wikidata.org/wiki/Q2016597', 'display_name': 'Ohmic contact', 'level': 3, 'score': 0.6680807}, {'id': 'https://openalex.org/C31625292', 'wikidata': 'https://www.wikidata.org/wiki/Q215803', 'display_name': 'Electroluminescence', 'level': 3, 'score': 0.66483295}, {'id': 'https://openalex.org/C176666156', 'wikidata': 'https://www.wikidata.org/wiki/Q25504', 'display_name': 'Light-emitting diode', 'level': 2, 'score': 0.6218966}, {'id': 'https://openalex.org/C79794668', 'wikidata': 'https://www.wikidata.org/wiki/Q1616270', 'display_name': 'Heterojunction', 'level': 2, 'score': 0.6140254}, {'id': 'https://openalex.org/C16115445', 'wikidata': 'https://www.wikidata.org/wiki/Q2391942', 'display_name': 'Schottky barrier', 'level': 3, 'score': 0.5857918}, {'id': 'https://openalex.org/C2778871202', 'wikidata': 'https://www.wikidata.org/wiki/Q411713', 'display_name': 'Gallium nitride', 'level': 3, 'score': 0.54811347}, {'id': 'https://openalex.org/C189278905', 'wikidata': 'https://www.wikidata.org/wiki/Q2157708', 'display_name': 'Wide-bandgap semiconductor', 'level': 2, 'score': 0.54329634}, {'id': 'https://openalex.org/C78434282', 'wikidata': 'https://www.wikidata.org/wiki/Q11656', 'display_name': 'Diode', 'level': 2, 'score': 0.4787949}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.4550177}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.2843052}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.24611095}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.11426124}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.10447997}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/iedm.2014.7047032', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'display_name': 'Affordable and clean energy', 'score': 0.83, 'id': 'https://metadata.un.org/sdg/7'}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 16, 'referenced_works': ['https://openalex.org/W1970923024', 'https://openalex.org/W1975779259', 'https://openalex.org/W1979488505', 'https://openalex.org/W1981416173', 'https://openalex.org/W2003286674', 'https://openalex.org/W2009099223', 'https://openalex.org/W2009891797', 'https://openalex.org/W2020183023', 'https://openalex.org/W2024121067', 'https://openalex.org/W2072541559', 'https://openalex.org/W2074853235', 'https://openalex.org/W2162871852', 'https://openalex.org/W2810908054', 'https://openalex.org/W3021705304', 'https://openalex.org/W355167676', 'https://openalex.org/W4298898028'], 'related_works': ['https://openalex.org/W4376610516', 'https://openalex.org/W3138069644', 'https://openalex.org/W2367646155', 'https://openalex.org/W2347634342', 'https://openalex.org/W2318011136', 'https://openalex.org/W2286381547', 'https://openalex.org/W2148471426', 'https://openalex.org/W2003109201', 'https://openalex.org/W2000487630', 'https://openalex.org/W1970115051'], 'abstract_inverted_index': {'We': [0], 'demonstrated': [1, 75], 'that': [2], 'the': [3, 34, 51, 59, 65, 84, 117], 'metal-AlGaN/GaN': [4], 'Schottky': [5, 72], 'diode': [6, 45], 'is': [7], 'capable': [8], 'of': [9, 33, 54], 'producing': [10], 'GaN': [11, 118], 'band-edge': [12], 'ultraviolet': [13], '(UV)': [14], 'emission': [15, 89], 'at': [16, 27], '3.4': [17], 'eV/364': [18], 'nm': [19], 'under': [20], 'forward': [21], 'bias': [22], 'larger': [23], 'than': [24], '∼2': [25], 'V': [26], 'room': [28], 'temperature.': [29], 'The': [30], 'underlying': [31], 'mechanism': [32], 'hole': [35], 'generation/injection': [36], 'and': [37, 87], 'electroluminescence': [38], '(EL)': [39], 'processes': [40], 'in': [41, 58, 82, 104, 110], 'this': [42], 'Schottky-on-heterojunction': [43], 'light-emitting': [44, 79], '(SoH-LED)': [46], 'was': [47, 102], 'discussed': [48], 'based': [49], 'on': [50, 116], 'impact': [52], 'ionization': [53], 'surface': [55], 'states': [56], 'presented': [57], '(Al)GaN': [60], 'barrier': [61], 'layer.': [62], 'By': [63], 'replacing': [64], 'conventional': [66], 'ohmic': [67], 'drain': [68, 85], 'with': [69], 'a': [70], 'semitransparent': [71], 'drain,': [73], 'we': [74], 'an': [76], 'AlGaN/GaN': [77], 'high-electron-mobility': [78], 'transistor': [80], '(HEM-LET)': [81], 'which': [83], 'current': [86], 'EL': [88], 'are': [90], 'controlled': [91], 'simultaneously': [92], 'by': [93], 'gate': [94], 'voltage.': [95], 'Switching': [96], 'operation': [97], 'up': [98], 'to': [99, 106], '120': [100], 'MHz': [101], 'obtained': [103], 'SoH-LED': [105], 'demonstrate': [107], 'its': [108], 'potential': [109], 'providing': [111], 'high-speed': [112], 'on-chip': [113], 'light': [114], 'sources': [115], 'electronic': [119], 'device': [120], 'platform.': [121]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2058040533', 'counts_by_year': [{'year': 2019, 'cited_by_count': 2}, {'year': 2017, 'cited_by_count': 1}, {'year': 2016, 'cited_by_count': 4}, {'year': 2015, 'cited_by_count': 3}], 'updated_date': '2024-09-17T13:44:33.522895', 'created_date': '2016-06-24'}