Title: Silicon carbide Schottky and ohmic contact process dependence
Abstract: The paper investigates the impact of temperature and other annealing conditions on experimental Schottky and ohmic characteristics of fabricated Ni/4HSiC and Ti/4HSiC Schottky diodes. The backside ohmic contact is always Ni/4HSiC. The ohmic contact characteristics greatly improve if the annealing is performed at high temperature×time product. The measurements of Ni/4HSiC Schottky show a decrease of the Schottky barrier height when increasing the annealing temperature. In the case of the Ti–Schottky contacts, the lowest Schottky barrier height was obtained for diodes annealed into H2 ambient.
Publication Year: 2002
Publication Date: 2002-03-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 14
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