Title: Site-competition epitaxy for superior silicon carbide electronics
Abstract: We present and discuss a novel dopant control technique for compound semiconductors, called site-competition epitaxy, which enables a much wider range of reproducible doping control and affords much higher and lower epilayer doping concentrations than was previously possible. Site-competition epitaxy is presented for the chemical vapor deposition of 6H-SiC epilayers on commercially available (0001)SiC silicon-face substrates. Results from utilizing site-competition epitaxy include the production of degenerately doped SiC epilayers for ohmic-as-deposited (i.e., unannealed) metal contacts as well as very low doped epilayers for electronic devices exhibiting SiC record-breaking reverse voltages of 300 and 2000 V for 3C- and 6H-SiC p-n junction diodes, respectively.
Publication Year: 1994
Publication Date: 1994-09-26
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 300
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot