Title: Comparison among SiC JFETs at 1 MHz hard-switched DC/DC converter
Abstract: Silicon carbide (SiC) is a wide bandgap semiconductor material that offers performance improvements over Si for power semiconductors. This paper presents the characteristics of experimental SiC JFETs and Schottky diodes. Also, this paper presents a performance comparison among these SiC devices in a 1 MHz hard-switched DC/DC converter. Further, it will identify the limitations of present SiC JFETs
Publication Year: 2005
Publication Date: 2005-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 3
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