Title: GaN/AlGaN HFETs fabricated on a SiC substrate
Abstract: Self-heating in GaN/AlGaN HFETs fabricated on sapphire and silicon carbide substrates has been compared. Pulse I-V measurements showed that the thermal resistance of devices on SiC substrates was about 5 lower than for sapphire. This demonstrates the need for SiC substrates to dissipate the enormous power density in these devices.
Publication Year: 2002
Publication Date: 2002-11-11
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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