Title: Interface states in Bi/Bi1−<i>x</i>Sb<i>x</i> heterojunctions
Abstract: A novel, band-inverted semiconductor junction is proposed. The heterojunction consists of two column V semimetals that have undergone a semimetal-semiconductor transition, i.e., a thin Bi film of thickness ∼100 Å and a Bi1−xSbx alloy with 0.06&lt;x&lt;0.3. Such a junction will support the recently predicted interfacial states. Results of calculations on the dispersion relation and optical transitions pertaining to the interfacial states are presented. It is shown that the optical transition rate between an interfacial state and the conduction state is comparable to that of a conduction-valence band transition. It is also shown that the optical transitions have very interesting polarization dependences.
Publication Year: 1987
Publication Date: 1987-12-28
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 9
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot