Title: Electrooptical detection of interface states in heterojunctions
Abstract: GeGaAs heterojunctions obtained by evaporation of a 2 μm thick Ge layer have been studied. Electroreflectance of infrared radiations has been a valuable means in determining the existence of an interface state band located (0.50 ± 0.02) eV from the conduction band of Ge. The photovoltaïc effect supports this interpretation.
Publication Year: 1970
Publication Date: 1970-02-16
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 2
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