Title: Determination of the conduction band discontinuity of a semiconductor n-N heterojunction
Abstract: A simple method is proposed from which the conduction band discontinuity energy ΔEC of a semiconductor heterojunction can be deduced. The method is applied to determine the conduction band discontinuities of various lattice-matched heterojunctions. The values of ΔEC so obtained for n-GaAs/N-A1yGa1−yAs heterojunctions with aluminium concentrations y = 0.3 and y = 0.4 and for c-Ge/GaAs, GaAs/ZnSe and c-Si/GaP heterojunctions are in reasonable agreement with those from other studies.
Publication Year: 1994
Publication Date: 1994-01-01
Language: en
Type: article
Indexed In: ['crossref']
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