Abstract: State‐of‐the‐art long wavelength infrared (LWIR) photovoltaic detectors fabricated in HgCdTe grown by both liquid phase epitaxy (LPE) and metalorganic vapor phase epitaxy (MOVPE) have been described. To take the advantage of the strengths of the buried homojunction and the heterojunction epitaxy techniques, a new process has been developed for producing the double layer planar heterojunction (DLPH) HgCdTe photodiodes.
Publication Year: 2005
Publication Date: 2005-01-01
Language: en
Type: article
Indexed In: ['crossref']
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