Title: Set and Reset Properties of Phase Change Memory Cells with Double-Layer Chalcogenide Films (Ge[sub 2]Sb[sub 2]Te[sub 5] and Sb[sub 2]Te[sub 3])
Abstract: Phase change memory cells with monolayer chalcogenide film ( or ) and double-layer chalcogenide films ( and ) were successfully fabricated. Cells with double-layer chalcogenide films show the abilities of multilevel data storage and lower set threshold voltages than monolayer ones. A thermal model for reset process was applied to calculate the phase change power consumption of each cell. The cell with the structure like shows the lower power consumption and less reset time than the cell with the structure like .