Title: Submicron Nonvolatile Memory Cell Based on Reversible Phase Transition in Chalcogenide Glasses
Abstract: Electrically rewritable nonvolatile memories using chalcogenide semiconductors were studied. The memory cell size was changed from 0.3 to 1.5 µmφ using a focused ion beam. This material can be used for nonvolatile random access memory. Reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited to store bits of information. The currents for write/erase were decreased with reducing memory cell size. In the memory cell of 0.6 µmφ, more than 10 4 repetition cycles of the phase transition were attained by the electric pulses. The voltages for the crystallization and amorphization processes were 2 V and 2.2 V, respectively.
Publication Year: 2000
Publication Date: 2000-11-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 65
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