Title: Transient effects of delay, switching and recovery in phase change memory (PCM) devices
Abstract: Threshold switching effects play a critical role in phase change memory (PCM) devices, since they contribute to the programming (set/reset) times and may lead to unwanted disturbs during the read operation. This work presents a detailed characterization and modeling of transient effects of delay, switching and recovery in PCM devices, allowing to quantitatively evaluate the statistical impact of read disturb and the ultimate speed limitations to set/reset and program/verify loops.
Publication Year: 2008
Publication Date: 2008-12-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 27
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