Title: MOLECULAR DYNAMICS SIMULATIONS OF MOLECULAR BEAM EPITAXY
Abstract: Molecular dynamics simulations of the deposition of semiconductor thin films provide detailed information on the kinetics that is not accessible by other methods. These simulations can include, for example, the reconstruction of the advancing crystal-vapor interface. The mechanism for the change in structure as the surface layer is transformed to bulk crystal has been studied. The mobility of atoms in various sites in the vicinity of the surface controls the structure of the deposit; i.e., the formation of crystalline defects or amorphous material. In this paper we discuss the deposition of silicon onto (100) and (111) substrates under various conditions, including impingement of atomic beams of different energies. In addition, we discuss simulations designed to assess the limits on the amount of misfit which can be accommodated between film and substrate without the formation of defects in the film. The computations were performed on a special purpose computer ATOMS which we designed for the efficient processing of molecular dynamics code.
Publication Year: 1991
Publication Date: 1991-01-01
Language: en
Type: book-chapter
Indexed In: ['crossref']
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Cited By Count: 2
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