Title: Crystallinity improvement of Hg1−xCdxTe films grown by a liquid-phase epitaxial technique
Abstract: Work was done, with emphasis on modifying substrate orientation and liquid-phase epitaxy (LPE) mode, to improve the crystallinity of Hg1−xCdxTe epitaxial layers. The results show that the epilayers grown on the 1.2°–2° off (1 1 1)A substrate exhibit better crystal quality and fewer Te precipitates than those grown on other tilted substrates. Further, an adequate meltetch of substrate before LPE provides a fresh surface for epitaxial growth, while a meltetch of the epilayer at the end of LPE prevents spurious growth and melt sticking.
Publication Year: 1998
Publication Date: 1998-02-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 3
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot