Title: Low energy ion beam and plasma modification of materials : symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.
Abstract: Part I. Fundamentals of Ion-Material Interactions Part II. Microwave Ion Sources for Deposition and Etching part I. Fabrication processes and physical properties T. T. Chau, S. R. Mejia and K. C. Kao 11. Structural and interfacial characteristics of thin (<10 nm) SiO2 films grown by electron cyclotron resonance plasma oxidation on [100] si substrates Tai D. Nguyen, D. A. Carl, D. W. Hess, M. A. Lieberman and R. Gronsky 12. Cubic brown nitride prepared by an ECR plasma Y. Osaka, M. Okamoto and Y. Utsumi 13. The ECR-plasma deposition of silicon nitride on a tunnel oxide J. C. Barbour, H. J. Stein and C. A. Outten 14. ECR plasma etching technology for ULSIs Seiji Samukawa 15. The mechanisms of reactive ion etching of SiOx (x<2) with electron cyclotron resonance and Kaufman ion sources R. A. Kant, C. R. Eddy, Jr, and B. D. Sartwell 16. Shallow p+-n junction fabrication by plasma immersion ion implantation C. A. Pico, X. Y. Qian, E. Jones, M. A. Lieberman and N. W. Chang 17. Electron cyclotron resonance hydrogenation of poly-si thin film transistors on SiO2/Si substrates Gand Liu, Robert A. Ditizio, Stephen J. Fonash and Nang Tran 18. Electron cyclotron resonance hydrogen plasma induced defects in thermally grown and sputter depositied SiO2 W. L. Hallett, R. A. Ditizio and S. J. Fonash Part III. Processing of High Tc Thin Films and Interfaces Part III. Processing of High Tc Thin Films and Interfaces Part IV. Electronic Materials Part V. Electronic Materials Part VI. Ion Processing of Oxides, Nitrides, Polymers and Carbon Part VII. Ion Processing of Metals.
Publication Year: 1991
Publication Date: 1991-01-01
Language: en
Type: book
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