Get quick answers to your questions about the article from our AI researcher chatbot
{'id': 'https://openalex.org/W3141977269', 'doi': None, 'title': 'Analytical 2D model for the channel electric field in undoped Schottky barrier Double-Gate MOSFET', 'display_name': 'Analytical 2D model for the channel electric field in undoped Schottky barrier Double-Gate MOSFET', 'publication_year': 2010, 'publication_date': '2010-01-01', 'ids': {'openalex': 'https://openalex.org/W3141977269', 'mag': '3141977269'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'http://yadda.icm.edu.pl/yadda/element/bwmeta1.element.ieee-000005551529', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4306419073', 'display_name': 'International Conference Mixed Design of Integrated Circuits and Systems', 'issn_l': None, 'issn': None, 'is_oa': False, 'is_in_doaj': False, 'is_core': False, 'host_organization': None, 'host_organization_name': None, 'host_organization_lineage': [], 'host_organization_lineage_names': [], 'type': 'conference'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'proceedings-article', 'indexed_in': [], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5041431499', 'display_name': 'Esther I. Schwarz', 'orcid': 'https://orcid.org/0000-0001-8840-981X'}, 'institutions': [], 'countries': [], 'is_corresponding': False, 'raw_author_name': 'Schwarz', 'raw_affiliation_strings': [], 'affiliations': []}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5042938760', 'display_name': 'Kloes', 'orcid': None}, 'institutions': [], 'countries': [], 'is_corresponding': False, 'raw_author_name': 'Kloes', 'raw_affiliation_strings': [], 'affiliations': []}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5026904876', 'display_name': 'Iñíguez', 'orcid': None}, 'institutions': [], 'countries': [], 'is_corresponding': False, 'raw_author_name': 'Iñíguez', 'raw_affiliation_strings': [], 'affiliations': []}], 'countries_distinct_count': 0, 'institutions_distinct_count': 0, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 0.0, 'has_fulltext': False, 'cited_by_count': 0, 'citation_normalized_percentile': {'value': 0.0, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 0, 'max': 64}, 'biblio': {'volume': None, 'issue': None, 'first_page': '58', 'last_page': '63'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10558', 'display_name': 'Nanoelectronics and Transistors', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10558', 'display_name': 'Nanoelectronics and Transistors', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10472', 'display_name': 'Atomic Layer Deposition Technology', 'score': 0.9993, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11853', 'display_name': 'Physics and Chemistry of Schottky Barrier Height', 'score': 0.9984, 'subfield': {'id': 'https://openalex.org/subfields/3107', 'display_name': 'Atomic and Molecular Physics, and Optics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/double-gate-transistors', 'display_name': 'Double-Gate Transistors', 'score': 0.606115}, {'id': 'https://openalex.org/keywords/schottky-barrier', 'display_name': 'Schottky Barrier', 'score': 0.551556}, {'id': 'https://openalex.org/keywords/dielectric-breakdown', 'display_name': 'Dielectric Breakdown', 'score': 0.539605}, {'id': 'https://openalex.org/keywords/tunnel-field-effect-transistors', 'display_name': 'Tunnel Field-Effect Transistors', 'score': 0.521629}, {'id': 'https://openalex.org/keywords/double-gate', 'display_name': 'Double gate', 'score': 0.43661103}], 'concepts': [{'id': 'https://openalex.org/C2778413303', 'wikidata': 'https://www.wikidata.org/wiki/Q210793', 'display_name': 'MOSFET', 'level': 4, 'score': 0.80786717}, {'id': 'https://openalex.org/C16115445', 'wikidata': 'https://www.wikidata.org/wiki/Q2391942', 'display_name': 'Schottky barrier', 'level': 3, 'score': 0.66452026}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.58630335}, {'id': 'https://openalex.org/C60799052', 'wikidata': 'https://www.wikidata.org/wiki/Q46221', 'display_name': 'Electric field', 'level': 2, 'score': 0.55059224}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.5126878}, {'id': 'https://openalex.org/C127162648', 'wikidata': 'https://www.wikidata.org/wiki/Q16858953', 'display_name': 'Channel (broadcasting)', 'level': 2, 'score': 0.47347274}, {'id': 'https://openalex.org/C3019885731', 'wikidata': 'https://www.wikidata.org/wiki/Q48087455', 'display_name': 'Double gate', 'level': 5, 'score': 0.43661103}, {'id': 'https://openalex.org/C131017901', 'wikidata': 'https://www.wikidata.org/wiki/Q170451', 'display_name': 'Logic gate', 'level': 2, 'score': 0.41852584}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.40115434}, {'id': 'https://openalex.org/C24326235', 'wikidata': 'https://www.wikidata.org/wiki/Q126095', 'display_name': 'Electronic engineering', 'level': 1, 'score': 0.35793105}, {'id': 'https://openalex.org/C61696701', 'wikidata': 'https://www.wikidata.org/wiki/Q770766', 'display_name': 'Engineering physics', 'level': 1, 'score': 0.3465547}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.22206864}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.1818817}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.14256427}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.12693587}, {'id': 'https://openalex.org/C78434282', 'wikidata': 'https://www.wikidata.org/wiki/Q11656', 'display_name': 'Diode', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'http://yadda.icm.edu.pl/yadda/element/bwmeta1.element.ieee-000005551529', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4306419073', 'display_name': 'International Conference Mixed Design of Integrated Circuits and Systems', 'issn_l': None, 'issn': None, 'is_oa': False, 'is_in_doaj': False, 'is_core': False, 'host_organization': None, 'host_organization_name': None, 'host_organization_lineage': [], 'host_organization_lineage_names': [], 'type': 'conference'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'score': 0.74, 'display_name': 'Affordable and clean energy', 'id': 'https://metadata.un.org/sdg/7'}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 0, 'referenced_works': [], 'related_works': ['https://openalex.org/W2909294472', 'https://openalex.org/W2783358171', 'https://openalex.org/W2488366017', 'https://openalex.org/W2157699230', 'https://openalex.org/W2129288406', 'https://openalex.org/W2114885984', 'https://openalex.org/W2110169254', 'https://openalex.org/W2065873645', 'https://openalex.org/W2059792713', 'https://openalex.org/W2035845064', 'https://openalex.org/W2029278551', 'https://openalex.org/W2017519076', 'https://openalex.org/W1999017450', 'https://openalex.org/W1998136975', 'https://openalex.org/W1981065673', 'https://openalex.org/W1972213551', 'https://openalex.org/W1970938637', 'https://openalex.org/W1893702772', 'https://openalex.org/W1762198282', 'https://openalex.org/W1526284361'], 'abstract_inverted_index': None, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W3141977269', 'counts_by_year': [], 'updated_date': '2024-08-29T12:40:40.647243', 'created_date': '2021-04-13'}