Title: A subthreshold surface potential modeling of drain/source edge effect on double gate MOS transistor
Abstract: An analytical sub-threshold surface potential model for double gate MOSFET (DG-MOSFET) is presented incorporating the edge effects at the source and drain ends. As the gate length of DG MOSFETs is scaled down, the barrier lowering becomes very important. A fitting parameter α is introduced to compensate this effect. The results obtained with this modeled equation are well matched with the results from 2-D numerical simulator TCAD.
Publication Year: 2010
Publication Date: 2010-08-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 5
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