Title: Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate
Abstract: physica status solidi (a)Volume 188, Issue 1 p. 203-206 Original Paper Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate H. Kim, H. Kim [email protected] School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this authorV. Tilak, V. Tilak School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this authorB.M. Green, B.M. Green School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this authorJ.A. Smart, J.A. Smart School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this authorW.J. Schaff, W.J. Schaff School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this authorJ.R. Shealy, J.R. Shealy School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this authorL.F. Eastman, L.F. Eastman School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this author H. Kim, H. Kim [email protected] School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this authorV. Tilak, V. Tilak School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this authorB.M. Green, B.M. Green School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this authorJ.A. Smart, J.A. Smart School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this authorW.J. Schaff, W.J. Schaff School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this authorJ.R. Shealy, J.R. Shealy School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this authorL.F. Eastman, L.F. Eastman School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USASearch for more papers by this author First published: 22 November 2001 https://doi.org/10.1002/1521-396X(200111)188:1<203::AID-PSSA203>3.0.CO;2-CCitations: 44AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Abstract Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15–16, 2001), CA (USA) [1]). In this paper, we present the results of reliability tests performed on undoped AlGaN/GaN HEMTs on SiC under dc and rf stress conditions. Undoped AlGaN/GaN HEMTs on SiC substrates have been submitted to on-wafer dc and rf stress conditions at a room temperature and the degradation in device performance induced by hot electron and thermal effects have been observed. Citing Literature Volume188, Issue1November 2001Pages 203-206 RelatedInformation
Publication Year: 2001
Publication Date: 2001-11-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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