Publication Information

{'id': 'https://openalex.org/W2012298973', 'doi': 'https://doi.org/10.1109/vppc.2010.5729180', 'title': 'On the suitability of Gallium-Nitride (GaN) based automotive power electronics', 'display_name': 'On the suitability of Gallium-Nitride (GaN) based automotive power electronics', 'publication_year': 2010, 'publication_date': '2010-09-01', 'ids': {'openalex': 'https://openalex.org/W2012298973', 'doi': 'https://doi.org/10.1109/vppc.2010.5729180', 'mag': '2012298973'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/vppc.2010.5729180', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'proceedings-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5086517363', 'display_name': 'Shayan Dargahi', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I60158472', 'display_name': 'Concordia University', 'ror': 'https://ror.org/0420zvk78', 'country_code': 'CA', 'type': 'education', 'lineage': ['https://openalex.org/I60158472']}], 'countries': ['CA'], 'is_corresponding': False, 'raw_author_name': 'S. Dargahi', 'raw_affiliation_strings': ['Power Electronics and Energy Research (PEER) Group, P. D. Ziogas Power Electronics Laboratory, Department of Electrical and Computer Engineering, Concordia University, 1455 de Maisonneuve Blvd. W. Montreal, Quebec H3G 1M8, Canada'], 'affiliations': [{'raw_affiliation_string': 'Power Electronics and Energy Research (PEER) Group, P. D. Ziogas Power Electronics Laboratory, Department of Electrical and Computer Engineering, Concordia University, 1455 de Maisonneuve Blvd. W. Montreal, Quebec H3G 1M8, Canada', 'institution_ids': ['https://openalex.org/I60158472']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5020550015', 'display_name': 'Sheldon S. Williamson', 'orcid': 'https://orcid.org/0000-0002-3776-4675'}, 'institutions': [{'id': 'https://openalex.org/I60158472', 'display_name': 'Concordia University', 'ror': 'https://ror.org/0420zvk78', 'country_code': 'CA', 'type': 'education', 'lineage': ['https://openalex.org/I60158472']}], 'countries': ['CA'], 'is_corresponding': False, 'raw_author_name': 'Sheldon S. Williamson', 'raw_affiliation_strings': ['Power Electronics and Energy Research (PEER) Group, P. D. Ziogas Power Electronics Laboratory, Department of Electrical and Computer Engineering, Concordia University, 1455 de Maisonneuve Blvd. W. Montreal, Quebec H3G 1M8, Canada'], 'affiliations': [{'raw_affiliation_string': 'Power Electronics and Energy Research (PEER) Group, P. D. Ziogas Power Electronics Laboratory, Department of Electrical and Computer Engineering, Concordia University, 1455 de Maisonneuve Blvd. W. Montreal, Quebec H3G 1M8, Canada', 'institution_ids': ['https://openalex.org/I60158472']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 2.748, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 6, 'citation_normalized_percentile': {'value': 0.565156, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 81, 'max': 82}, 'biblio': {'volume': None, 'issue': None, 'first_page': '1', 'last_page': '6'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10099', 'display_name': 'GaN-based semiconductor devices and materials', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10099', 'display_name': 'GaN-based semiconductor devices and materials', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10361', 'display_name': 'Silicon Carbide Semiconductor Technologies', 'score': 0.9979, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10022', 'display_name': 'Semiconductor Quantum Structures and Devices', 'score': 0.9899, 'subfield': {'id': 'https://openalex.org/subfields/3107', 'display_name': 'Atomic and Molecular Physics, and Optics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/power-electronics', 'display_name': 'Power Electronics', 'score': 0.68214333}, {'id': 'https://openalex.org/keywords/wide-bandgap-semiconductor', 'display_name': 'Wide-bandgap semiconductor', 'score': 0.6343372}, {'id': 'https://openalex.org/keywords/passivation', 'display_name': 'Passivation', 'score': 0.58213896}, {'id': 'https://openalex.org/keywords/automotive-electronics', 'display_name': 'Automotive electronics', 'score': 0.56829417}], 'concepts': [{'id': 'https://openalex.org/C2778871202', 'wikidata': 'https://www.wikidata.org/wiki/Q411713', 'display_name': 'Gallium nitride', 'level': 3, 'score': 0.88361377}, {'id': 'https://openalex.org/C178911571', 'wikidata': 'https://www.wikidata.org/wiki/Q593143', 'display_name': 'Power electronics', 'level': 3, 'score': 0.68214333}, {'id': 'https://openalex.org/C129014197', 'wikidata': 'https://www.wikidata.org/wiki/Q906544', 'display_name': 'Power semiconductor device', 'level': 3, 'score': 0.661931}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.64702344}, {'id': 'https://openalex.org/C189278905', 'wikidata': 'https://www.wikidata.org/wiki/Q2157708', 'display_name': 'Wide-bandgap semiconductor', 'level': 2, 'score': 0.6343372}, {'id': 'https://openalex.org/C138331895', 'wikidata': 'https://www.wikidata.org/wiki/Q11650', 'display_name': 'Electronics', 'level': 2, 'score': 0.6048911}, {'id': 'https://openalex.org/C33574316', 'wikidata': 'https://www.wikidata.org/wiki/Q917260', 'display_name': 'Passivation', 'level': 3, 'score': 0.58213896}, {'id': 'https://openalex.org/C2778520156', 'wikidata': 'https://www.wikidata.org/wiki/Q449343', 'display_name': 'Automotive electronics', 'level': 3, 'score': 0.56829417}, {'id': 'https://openalex.org/C526921623', 'wikidata': 'https://www.wikidata.org/wiki/Q190117', 'display_name': 'Automotive industry', 'level': 2, 'score': 0.5540506}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.53639734}, {'id': 'https://openalex.org/C79635011', 'wikidata': 'https://www.wikidata.org/wiki/Q175805', 'display_name': 'Semiconductor device', 'level': 3, 'score': 0.4962476}, {'id': 'https://openalex.org/C2777289219', 'wikidata': 'https://www.wikidata.org/wiki/Q7632154', 'display_name': 'Substrate (aquarium)', 'level': 2, 'score': 0.47932613}, {'id': 'https://openalex.org/C61696701', 'wikidata': 'https://www.wikidata.org/wiki/Q770766', 'display_name': 'Engineering physics', 'level': 1, 'score': 0.4789596}, {'id': 'https://openalex.org/C108225325', 'wikidata': 'https://www.wikidata.org/wiki/Q11456', 'display_name': 'Semiconductor', 'level': 2, 'score': 0.46768337}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.45034972}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.44306853}, {'id': 'https://openalex.org/C163258240', 'wikidata': 'https://www.wikidata.org/wiki/Q25342', 'display_name': 'Power (physics)', 'level': 2, 'score': 0.4383933}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.42173254}, {'id': 'https://openalex.org/C119321828', 'wikidata': 'https://www.wikidata.org/wiki/Q1267190', 'display_name': 'Breakdown voltage', 'level': 3, 'score': 0.4113344}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.21759394}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.18466052}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.06484148}, {'id': 'https://openalex.org/C111368507', 'wikidata': 'https://www.wikidata.org/wiki/Q43518', 'display_name': 'Oceanography', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C146978453', 'wikidata': 'https://www.wikidata.org/wiki/Q3798668', 'display_name': 'Aerospace engineering', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C127313418', 'wikidata': 'https://www.wikidata.org/wiki/Q1069', 'display_name': 'Geology', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/vppc.2010.5729180', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'id': 'https://metadata.un.org/sdg/7', 'display_name': 'Affordable and clean energy', 'score': 0.62}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 22, 'referenced_works': ['https://openalex.org/W1994811453', 'https://openalex.org/W1997509387', 'https://openalex.org/W2022503825', 'https://openalex.org/W2041842470', 'https://openalex.org/W2067019454', 'https://openalex.org/W2082095519', 'https://openalex.org/W2101973073', 'https://openalex.org/W2102175563', 'https://openalex.org/W2104750420', 'https://openalex.org/W2106703283', 'https://openalex.org/W2111051464', 'https://openalex.org/W2112559006', 'https://openalex.org/W2113934356', 'https://openalex.org/W2119173829', 'https://openalex.org/W2131765008', 'https://openalex.org/W2138267417', 'https://openalex.org/W2141493701', 'https://openalex.org/W2159168707', 'https://openalex.org/W2167950345', 'https://openalex.org/W2323572069', 'https://openalex.org/W2538104067', 'https://openalex.org/W4231822663'], 'related_works': ['https://openalex.org/W4386159450', 'https://openalex.org/W4240017343', 'https://openalex.org/W2887683729', 'https://openalex.org/W274769908', 'https://openalex.org/W2365691020', 'https://openalex.org/W2328046896', 'https://openalex.org/W2184546999', 'https://openalex.org/W1969620786', 'https://openalex.org/W1925242245', 'https://openalex.org/W1561862401'], 'abstract_inverted_index': {'This': [0], 'paper': [1, 31], 'aims': [2], 'at': [3], 'discussing': [4], 'the': [5, 30, 34, 54, 56, 61, 68, 119, 123], 'possibility': [6], 'of': [7, 58, 63, 102, 126], 'using': [8], 'GaN': [9, 50, 105, 116], 'power': [10, 14, 128], 'devices': [11, 23, 51, 106], 'in': [12, 26, 48], 'automotive': [13, 127], 'electronics': [15], 'applications.': [16], 'The': [17, 45], 'major': [18], 'issues': [19], 'with': [20], 'current': [21], 'silicon-based': [22], 'are': [24, 107], 'highlighted': [25], 'this': [27], 'paper.': [28], 'Furthermore,': [29], 'also': [32], 'discusses': [33], 'possible': [35], 'solutions': [36], 'offered': [37], 'by': [38], 'wide-band': [39], 'gap': [40], 'semiconductors,': [41], 'specifically': [42], 'Gallium-Nitride': [43], '(GaN).': [44], 'fundamental': [46], 'steps': [47], 'designing': [49], 'includes': [52], 'choosing': [53], 'substrate,': [55], 'dimensions': [57], 'each': [59], 'layer,': [60], 'length': [62], 'gate,': [64], 'drain,': [65], 'source,': [66], 'and': [67, 76, 98, 109, 137], 'distance': [69], 'between': [70], 'them,': [71], 'selecting': [72], 'materials': [73], 'for': [74], 'contacts,': [75], 'finally,': [77], 'optimizing': [78], 'passivation': [79], 'layer.': [80], 'Moreover,': [81], 'to': [82, 91, 121, 141], 'achieve': [83], 'higher': [84], 'breakdown': [85], 'voltages,': [86], 'field': [87], 'plate': [88], 'technology': [89], 'has': [90, 118], 'be': [92, 113, 142], 'executed.': [93], 'High': [94], 'voltage,': [95], 'high': [96, 99], 'current,': [97], 'temperature': [100], 'operation': [101, 139], 'previously': [103], 'fabricated': [104], 'studied': [108], 'summarized.': [110], 'It': [111], 'can': [112], 'concluded': [114], 'that': [115], 'definitely': [117], 'potential': [120], 'dominate': [122], 'next': [124], 'generation': [125], 'electronic': [129], 'systems.': [130], 'However,': [131], 'certain': [132], 'issues,': [133], 'such': [134], 'as': [135], 'normally-off': [136], 'vertical': [138], 'have': [140], 'thoroughly': [143], 'elucidated.': [144]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2012298973', 'counts_by_year': [{'year': 2014, 'cited_by_count': 1}, {'year': 2013, 'cited_by_count': 5}], 'updated_date': '2024-12-08T02:39:30.338672', 'created_date': '2016-06-24'}