Title: ANALYSIS OF DC CHARACTERISTICS AND SHORT CHANNEL EFFECTS IN DOUBLE GATE JUNCTIONLESS TRANSISTORS
Abstract: Junctionless transistor is a uniformly doped transistor without junctions. All existing transistors are having junctions which are formed by adding dopant atoms with different polarities into the semiconductor material. The conventional metal oxide semiconductor field effect transistor (MOSFET) needs different doping regions which leads to increase the short channel effects while down scaling the node side. In this paper various characteristics of a transistor called double gate (DG) junctionless transistor was analysed using technology computer aided design (TCAD). The influence of gate metal work function variation on DG junctionless transistor was investigated for different gate length (22nm, 20nm, 18nm, 16nm, 14nm). The different physical parameters like threshold voltage, Ion current, Ioff current, subthreshold slope, transconductance and drain induced barrier lowering were measured and found to be less degraded in DG junctionless transistor related to conventional inversion mode transistors. Overall, DG junctionless transistor with high doping concentration exhibits better control on the short channel effects. From the analysis it is found that the DG junctionless transistor is a promising alternative transistor for finer technology generation as it is less sensitive to gate work function.
Publication Year: 2020
Publication Date: 2020-01-01
Language: en
Type: article
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