Title: Gate Capacitance Extraction Two Dimensional T- Shaped Junction less Transistor Using Sentaurus TCAD
Abstract: The junctionless transistor is one of the device structures which found tremendous potential in terms of reduction of short channel effects, scaling factors, capacitance & fabrication. In this paper we observed an improved gate capacitance (Cgg) in depletion and inversion regions of a T-shape double gate junctionless transistor with comparison to the single gate junctionless transistor for oxide thickness (tox), different doping concentration (ND) and Gate lengths (Lg).
Publication Year: 2014
Publication Date: 2014-01-01
Language: en
Type: article
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Cited By Count: 1
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