Title: Temperature Dependence of Subthreshold Characteristics of Negative Capacitance Recessed-Source/Drain (NC R-S/D) SOI MOSFET
Abstract: This paper presents the subthreshold performance analysis of negative capacitance Recessed-Source/Drain SOI MOSFET (NC R-S/D SOI MOSFET). The effect of ferroelectric thickness on the subthreshold performance of NC R-S/D SOI MOSFET at given R-S/D thickness is studied and the same is compared with negative capacitance SOI MOSFET (NC SOI MOSFET). Device performance is also assessed at two different temperatures 300K and 340K to observe the device behavior at high temperatures. The parameters such as transfer characteristics, variation in subthreshold swing (SS) with drain current, the effect of ferroelectric thickness on the minimum subthreshold swing and the influence of negative capacitance on gate capacitance of the device are studied. The minimum subthreshold swing of 29mV/decade is achieved for NC R-S/D SOI MOSFET at 300K with a ferroelectric thickness of 5.5nm and recessed source/drain thickness of 10nm which is much lower than Boltzmann's limit (60mV/decade).
Publication Year: 2019
Publication Date: 2019-12-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 2
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