Title: Compact subthreshold slope modelling of short-channel double-gate MOSFETs
Abstract: A precise, compact, subthreshold slope model of short-channel nanoscale double-gate MOSFETs is presented. The model encompasses the effects of device dimensions, built-in voltages and bias voltages on the subthreshold slope. The subthreshold model is based on conformal mapping techniques. Results are in excellent agreement with numerical simulations.
Publication Year: 2009
Publication Date: 2009-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 5
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