Title: GaN layers grown directly onto GaAs by molecular beam epitaxy
Abstract: GaN layers were grown by radio-frequency nitrogen plasma source molecular beam epitaxy onto both (001) and (111) GaAs wafers. The deposition temperature was varied from 500°C up to 730°C. GaN layers grown on (111) GaAs are hexagonal with columnar morphology. The growth onto (001) GaAs results in hexagonal layers under nitrogen-rich conditions, while cubic GaN layers are grown at a stoichiometric N/Ga ratio. The grown layers are studied by transmission electron microscopy in cross section. The orientation relationships are determined.
Publication Year: 2018
Publication Date: 2018-01-18
Language: en
Type: book-chapter
Indexed In: ['crossref']
Access and Citation
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot