A Yellow InGaP Light Emitting Diode Epitaxially Grown on Si Substrate

Name: Work Video:
Duration: 3 min 30 s
Description: A yellow InGaP light emitting diode (LED) emitting at 590 nm epitaxially grown on Si substrate with SiGe and GaAsP buffer layers is demonstrated. Characterizations of the epitaxy growth and device fabrication are presented.
Cong Wang; Bing Wang; Kenneth Eng Kian Lee; Soon Fatt Yoon; Jürgen Michel
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