Abstract:Recently, semiconductor devices are widely used for not only terrestrial applications but also for space applications since large quantity of data can be managed, high-seep calculation can be carried ...Recently, semiconductor devices are widely used for not only terrestrial applications but also for space applications since large quantity of data can be managed, high-seep calculation can be carried out, and power management with low loss can be achieved using semiconductor devices. Destructive and nondestructive malfunctions of semiconductor devices are induced by irradiation. Therefore, understanding radiation effects on semiconductors is important for applications used in harsh radiation environments such as space. When radiations penetrate semiconductors, dense charges (electron-hole pairs) are generated in semiconductors. Also, atoms are ejected from the crystal lattice by incidence of radiation. As a result, the following three major radiation effects on semiconductor devices are induced: the Total Ionizing Dose (TID) Effect, the Displacement Damage Dose (DDD) Effect, and the Single Event Effect (SEE). TID is observed for metal oxide semiconductor (MOS) devices when charges are accumulated in oxide and interface between oxide and semiconductor. DDD is the degradation of semiconductor devices due to the creation of crystal damage by irradiation. SEE occurs by charge generated by even a single energetic particle incidence. In this chapter, the details of those TID, DDD, and SEE are explained after radiation environments in space and history of radiation effects on semiconductor devices are briefly mentioned.Read More
Publication Year: 2018
Publication Date: 2018-01-01
Language: en
Type: book-chapter
Indexed In: ['crossref']
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Cited By Count: 3
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