Title: Electron scattering channels in GaAs: A fully first-principles study of electron transport
Abstract: We present a parameter-free first-principles framework for studying the electron transport in GaAs through the effect of electron-phonon interaction (EPI). Both the long-range and shortrange EPI are well addressed and found to have remarkable impacts on the electron transport properties. Our calculation results reveal significant differences from existing semi-empirical model in terms of scattering mechanisms and their energy dependence. Using iterative solution of the electron Boltzmann transport equation, we achieved excellent agreements with experimental data on mobility and identified that the electrons with mean free paths in the range of 130 to 160 nm contribute dominantly to the electron transport.
Publication Year: 2016
Publication Date: 2016-06-22
Language: en
Type: preprint
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