Title: Study of two-dimensional gas transport properties: An approach to electron transport in TEGFETs
Abstract: This paper presents a Monte Carlo study of the mobility of a Two-Dimensional Electron Gas (TDEG), i.e. of electrons of which one degree of freedom is bound to a potential well. This situation is usually obtained at semiconductor heterointerfaces like GaAlAs/GaAs for instance. Here the electron mobility is studied as a function of temperature and electric field applied parallel to the heterointerfaces forming the well. In particular the influence of the width of the well on the mobility is recognized.
Publication Year: 1985
Publication Date: 1985-03-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 10
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