Title: Calculation of Gate Leakage Currents in MOS Transistors with Gate-Stacked Dielectrics
Abstract: A sequential tunneling model was proposed to calculate direct tunneling gate currents through metal-oxide semiconductor transistors(MOSTs) with high-k/SiO2 gate dielectrics,using Bardeen's transfer Hamiltonian formalism and with quantum mechanical effect in inversion layers taken into consideration.Gate leakage currents in four MOSTs with different gate stack dielectrics(Si3N4/SiO2,Al2O3/SiO2,HfO2/SiO2 and La2O3/SiO2) vs.gate voltages and equivalent oxide thickness were investigated numerically.Scaling down of MOSTs with high-k/SiO2 gate dielectrics was discussed based on the calculated results.
Publication Year: 2007
Publication Date: 2007-01-01
Language: en
Type: article
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