Title: The Technology of EOT Control in High k Dielectric/metal Gate Electrode CMOS Device
Abstract: With CMOS device characteristic dimension scaling,the gate dielectric becomes thinner and thinner according to the principle of scaling. Consequently,the gate leakage current increases significantly and the device becomes less reliable. So the traditional SiO2 dielectric can not satisfy the next generation process node. The high k dielectric will definitely replace SiO2 as the gate dielectric. In this paper,the most recent research around world in the control of EOT (Equivalent Oxide Thickness) in nano-scale CMOS high k dielectric is investigated. The reasons why to decrease EOT,the methods how to decrease it are discussed referring to the author's research. In the end,this paper forecasts the technology of control of EOT in high k dielectric/metal gate electrode COMS device.
Publication Year: 2010
Publication Date: 2010-01-01
Language: en
Type: article
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Cited By Count: 1
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