Title: Hf-based high-k gate dielectrics - Scalability for hp45 node and beyond -
Abstract: This proceeding we will discuss the scalability of Hf-based high-k gate dielectrics for hp45 node and beyond both with high-temperature gate-first integration and low-temperature gate-last integration. It describes the process optimization and metal gate MOSFET characteristics using gate-first integration with HfSiON and gate-last integration with HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> .
Publication Year: 2006
Publication Date: 2006-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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