Title: Thick Microporous Silicon Layers Etching Involving p[sup +]n Back Side Hole Injection in Highly Resistive n-Type Substrates
Abstract: Anodization studies on low-doped n-type silicon in aqueous electrolytes have systematically shown the formation of macropores. In this paper, we show the possibility to produce microporous silicon in low-doped n-type substrates. We use the temperature gradient zone melting doping technique to realize a deep back side p–n junction as a hole provider to obtain microporous silicon layers. It is believed that the transition from macroporous to microporous formation is linked to hole injection to the anodic HF|Si interface. To corroborate this hypothesis, we have investigated the back side p–n junction injection efficiency by Synopsis Sentaurus simulations.
Publication Year: 2011
Publication Date: 2011-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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