Title: Numerical analysis of the Gibbs–Thomson effect on trench-filling epitaxial growth of 4H-SiC
Abstract: Abstract A steady-state two-dimensional diffusion equation was numerically analyzed to examine the rate of homoepitaxial growth on a trenched 4H-SiC substrate. The radii of curvature at the top and bottom of the trenches were used to take the Gibbs–Thomson effect into account in the analysis based on the conventional boundary-layer model. When the trench pitch was less than or equal to 6.0 µm, the measured dependence of the growth rate on the trench pitch was found to be explained by the Gibbs–Thomson effect on the vapor-phase diffusion of growing species.
Publication Year: 2016
Publication Date: 2016-01-28
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 14
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