Title: APPLICATION OF MASS-RESOLVED ION SCATTERING, SECONDARY ION MASS SPECTROMETRY AND SAMPLE-CURRENT MEASUREMENTS FOR IN SITU DEPTH PROFILING OF THIN FILMS
Abstract: Secondary ion mass spectrometry (SIMS), mass-resolved ion scattering spectrometry (MARISS) and samplecurrent measurement (SCM) techniques were unified in an ad hoc instrumental set-up using the same primary ion-beam for controlled erosion of the sample and for simultaneous generation of different analytical signals. As an example of combined SIMS/MARISS/SCM application, sputter depth profiling through thin Au20A /AlNO/Ta20A films on Si by low-energy (1 keV) Ne + primary ion-beam is described. The experimental data of the thickness Z0.5 and the layer’s position Z for the superficial Au and buried Ta films were evaluated; the most correct results were obtained in MARISS mode.
Publication Year: 2002
Publication Date: 2002-01-01
Language: en
Type: article
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