Title: Characterization of SiC Schottky diodes at different temperatures
Abstract:The emergence of silicon carbide (SiC) based power semiconductor switches, with their superior features compared with silicon (Si) based switches, has resulted in substantial improvement in the perfor...The emergence of silicon carbide (SiC) based power semiconductor switches, with their superior features compared with silicon (Si) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications. In this study, commercial Si pn and SiC Schottky diodes are tested and characterized, their behavioral static and loss models are derived at different temperatures, and they are compared with respect to each other.Read More
Publication Year: 2003
Publication Date: 2003-06-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 96
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