Title: Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer
Abstract: The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed.
Publication Year: 1996
Publication Date: 1996-04-29
Language: en
Type: article
Indexed In: ['crossref']
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