Abstract: We present, to our knowledge, the first successful integration of two independent gates on a p-type FinFET. These results also represent a significant performance improvement over previously reported Independent-Gate FinFET results. The devices have gate lengths ranging from 0.5 to 5 μm, and designed fin thicknesses ranging from 25 to 75 nm. Electrical results show near-ideal subthreshold slopes in double-gate mode (both gates modulated simultaneously). Independent-Gate operation is also examined by modulating saturated drain current with both front and back-gate voltages independently. The results are compiled to analyze performance trends versus fin thickness and gate length.
Publication Year: 2004
Publication Date: 2004-03-30
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 44
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot