Title: (Invited) Quantum Capacitance Measurement of Bilayer Graphene
Abstract: We demonstrate a considerable suppression of the low-field leakage through a Y 2 O 3 topgate insulator on graphene by applying high-pressure O 2 at 100 atm during post-deposition annealing. Then, two kinds of issues, band gap opening and inter-band scattering at high carrier density, are discussed through the density of states of bilayer graphene estimated by the quantum capacitance measurement.
Publication Year: 2014
Publication Date: 2014-03-26
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 1
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot