Title: Analysis of Quantum Capacitance Effect in Ultra-Thin-Body III-V Transistor
Abstract: Quantum capacitance is expected to have strong impact on the gate capacitance in III-V devices. In this paper, we present a comprehensive analysis of the quantum capacitance for III-V ultra-thin body with thin box transistor. The results show the presence of quantum capacitance effect and step like behavior due to individual contribution of sub-bands in the gate capacitance. We discuss the impact of various parameters such as insulator thickness, channel (body) thickness on the capacitance with positive and negative back gate biases.
Publication Year: 2016
Publication Date: 2016-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 7
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