Title: Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/
Abstract: Double-mesa type SiGe heterojunction bipolar transistors (HBTs) have been improved by increasing the base Gummel number and by using a thin, highly doped launcher layer between the base and the collector. In addition, the contact resistance of the base contact has been reduced. Hence, it was possible to obtain a record maximum frequency of oscillation up to 160 GHz for a 2-emitter finger HBT in common emitter configuration.
Publication Year: 2002
Publication Date: 2002-11-19
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 123
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