Title: Emitter injection efficiency in heterojunction bipolar transistors
Abstract: Experimental approaches for measurement of the emitter injection efficiency in heterojunction bipolar transistors are discussed. The electron and hole currents crossing the base-emitter junction and the currents recombining within the quasi-neutral emitter and base region are also determined. The influence of the interface and space-charge region recombination is discussed qualitatively. New figures of merit for a bipolar transistor are introduced. Preliminary experimental results obtained on AlGaAs/GaAs transistors are presented.
Publication Year: 1987
Publication Date: 1987-11-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 9
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