Title: Silicon-on-sapphire with microsecond carrier lifetimes
Abstract: The lifetime in silicon films epitaxially grown on sapphire is usually in the nanosecond range. We have recently succeeded in growing such silicon-on-sapphire (SOS) layers with lifetimes of several microseconds. These films were grown at 1025 °C by first forming an n+ film on sapphire followed by a moderately doped n layer. The heavily phosphorus-doped n+ layer appears to act as an effective getter and is the key to the high lifetime values.
Publication Year: 1973
Publication Date: 1973-05-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 17
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