Title: Localization and composition of impurity clusters in silicon and their influence on its emission properties
Abstract: By direct observation of microcharts in the rays of various ions with masses < 50 is found that commercial silicon contains impurity clusters with alkali and other contaminations. The effect of impurity clusters on the emission properties of silicon and the quality of silicon-based semiconductor devices are discussed. The possibility is shown of producing silicon free of impurity clusters. [Russian Text Ignored]
Publication Year: 1973
Publication Date: 1973-03-16
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 2
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