Title: Single-event upset in evolving commercial silicon-on-insulator microprocessor technologies
Abstract: Single-event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes and core voltages. Multiple-bit upsets in registers and D-cache were measured and compared with single-bit upsets. Also, the scaling of the cross section with reduction of feature size for SOI microprocessors is discussed.
Publication Year: 2003
Publication Date: 2003-12-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 20
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