Title: Boltzmann‐Matano Analysis of Boron Profiles in Silicon
Abstract: Boltzmann‐Matano analysis of the boron profiles in silicon diffused from the boron‐excess BN film was carried out, and the boron diffusivity was obtained as a function of the local concentration. Boron diffusivity in silicon can be described by the diffusion model, which considers both effects of the charged monovacancy‐impurity interaction and the internal electric field. The prefactors in the simplified expressions of , , and as a function of the surface concentration normalized to the intrinsic carrier concentration at the diffusion temperature were obtained by the numerical analysis of the diffusion equation, including the concentration‐dependent diffusivity.
Publication Year: 1984
Publication Date: 1984-12-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 7
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