Title: Capacitively coupled measurements of the quantized hall effect in silicon inversion layers
Abstract: We report the observation of the quantized Hall effect in silicon inversion layers using capacitors in place of ohmic contacts. Measurements were made at frequencies between 5.00 and 100.0 kHz.
Publication Year: 1984
Publication Date: 1984-12-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 4
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