Title: Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides
Abstract: Which parameter dominantly decides the value of time required to reset ReRAM ( t reset ) among possible parameters, the value of a low resistance ( R L ), voltage to induce reset ( V reset ), and temperature to induce reset ( T reset ) Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters are still unclear. In this paper, we extracted t reset , V reset , R L and T reset at the same time by combining two electrical measurements. As a result, we found a clear correlation between V reset , R L , and T reset , meaning that each parameter can not be controlled independently. T reset increases not only with increasing V reset but also with increasing R L , which suggests the necessity of introducing ununiformly-shaped filamens and resistive switching takes place at the narrowing part of the filament.
Publication Year: 2014
Publication Date: 2014-10-31
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 2
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