Title: Communication—Effect of a Self-Limited Reset Operation on the Reset Breakdown Characteristics of a Monolithically Integrated 1T1R RRAM
Abstract: The reset breakdown of resistive random access memory (RRAM) significantly degrades device endurance. We suppressed reset breakdown by optimizing the reset operation in an HfO2-based 1T1R RRAM device. The effective gate-to-source voltage VGSeff is reduced by increasing the RRAM resistance during the reset operation. By applying the optimum VGS, we can both guarantee a sufficient reset current and suppress reset breakdown. The experimental results confirmed improved endurance characteristics without a degraded resistance ratio.
Publication Year: 2017
Publication Date: 2017-01-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 2
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